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Release time: 2018 - 03 - 13
AAO on Al substrate has honeycomb-like structure, composed with hexagon column of Al2O3, with a circular pore in the center. At the end of the pore, there is a half-sphere shape barrier layer oxide layer in contact with aluminum. The porous oxide film contains mutually parallel cylindrical pores extending from the barrier oxide layer to the film surface. So AAO on Al substrate is suitable to fabricate polymer nanowires or nanotubes.Fabrication of polymer nanowires or nanotubesFabrication of polymer nanowires or nanotubes by (a) heat- and pressure-driven nanoimprint and (b) polymer solution and pore wetting.Reference:Science, 2002, 296, 1997;ChemPhysChem, 2003, 4, 1171-1176; Langmuir, 2004,20,7665-7669.Nano Lett., 2007, 7, 183; Journal of Nanomaterials, 2009, doi:10.1155/2009/4363...
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Release time: 2018 - 03 - 13
Application of Isotropic AAO templatesFabrication of metal nanowiresFig. 3.1 General scheme for electrochemical deposition (ECD) of materials into porous AAO.In general, to synthesize nanowires, the same general procedure can be applied irrespective of the materials to be deposited (Fig. 3.1). First, a thin Ag layer is deposited onto one face of an AAO membrane. This Ag layer serves as the working electrode in the deposition of desired materials. Next, a thin layer of sacrificial Ag (or Ni) is electrochemically deposited into the pores. After that, the desired material is electrochemically deposited. The resulting nanowires/AAO composite sample then is dipped into HNO3 solution to remove the Ag working electrode layer and the sacrificial layer (Ag or Ni). The nanowires can be collecte...
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Release time: 2018 - 03 - 13
Next-generation non-volatile memory needs fast operating speed, low power consumption, and good electrical reliability. Scaling is also very important for high-density data storage. Resistive switching random access memory (ReRAM) and the related memristors are promising candidates for next-generation non-volatile memory because of its simple metal–insulator–metal (MIM) structure and superior scalability. In addition, ReRAM has multilevel data storage capability.In 2016, Ji-Min Song and Jang-Sik Lee reported the fabrication of resistive switching memory devices with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes.Fig. 1 Schematic procedure for nano-scale resistive switching random access m...
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Release time: 2018 - 03 - 14
Multiferroic magnetoelectric (ME) composites exhibit sizable ME coupling at room temperature, promising applications in a wide range of novel devices. In 2016, Xiaoyan Zhang et al. explored the well-ordered array of isolated epitaxial BiFeO3/CoFe2O4/SrRuO3 heterostructured nanodots fabricated by nanoporous anodic alumina (AAO) template method. A schematic of the fabrication process is illustrated in Fig. 1a, which involves three steps: AAO mask transfer (i), materials deposition by PLD (ii), and mask removal (iii). The AAO mask was removed by mechanical or chemical liftoff, thus leaving the nanodot array alone. The thickness of AAO film is about 250 nm. The nanodots exhibit an average lateral size of ~70 nm and neighboring dot−dot distance of ~110 nm. It was found that the heterostruc...
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Release time: 2018 - 03 - 13
In 2015, Yong Lei team reported the fabrication of ordered and uniform Ag nanoparticles and their surface modification for to enhance the Performance of Surface Plasmon Resonance for Application in Solar Energy Conversion. The fabrication processes are shown in Fig. 1. UTAMs with the thickness of ~300 nm were carefully mounted on ITO coated Glass substrates. Using these UTAMs as patterning masks, Ag nanoparticles were fabricated on ITO (indium tin oxide)-coated glass by electron beam evaporation. After removing the UTAM by a scotch tape, a uniform TiO2 shell layer was coated on the Ag nanoparticles by ALD to form Ag@TiO2 core–shell nanocapsule structures. By accurately controlling the dielectric TiO2 shells coated on ordered plasmonic Ag nanoparticle arrays, dipole and quadr...
source:
Release time: 2018 - 03 - 14
Through-pore ultrathin AAO template were placed on substrates such as Si, GaN and GaAs. Plasma etching were used to form nanopores on the substrate. The resultant pore diameter is about the same as the original AAO mask. The uniformity and the packing density are determined by the original AAO membranes. On the other hand, the wafer patterned with evaporated highly ordered metal nanocaps can be selective etched by plasma etching to fabricate nanopillar array.Fig. 1 Schematic of the fabrication of lateral two-dimensional superlattice structures: nanopore array and nanopillar array.Reference: Journal of Applied Physics 91, 2544-2546 (2002) ;Nano Lett., 8, 3046-3051 (2008).
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