Next-generation non-volatile memory needs fast operating speed, low power consumption, and good electrical reliability. Scaling is also very important for high-density data storage. Resistive switching random access memory (ReRAM) and the related memristors are promising candidates for next-generation non-volatile memory because of its simple metal–insulator–metal (MIM) structure and superior scalability. In addition, ReRAM has multilevel data storage capability.
In 2016, Ji-Min Song and Jang-Sik Lee reported the fabrication of resistive switching memory devices with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes.
Fig. 1 Schematic procedure for nano-scale resistive switching random access memory (ReRAM) device fabrication. Planar SEM image of transferred AAO template is shown in the figure. The Ni is synthesized by electrochemical deposition with AAO as the template mask and finally array of MIM (Ni/NiO/Ni)-structured nanoscale ReRAM devices is fabricated.
Fig. 1 shows the fabrication of the Ni/NiO/Ni structured nanodot array. Indium tin oxide (ITO) deposited on SiO2 substrate was used as the working electrode for electrochemical deposition. The pore array was very well aligned with the hexagonal structure; the pore size was about 75 nm, the distance from pore to pore was about 100 nm, and the pore density was around 1x1010cm-2.
It is difficult to implement electrodeposition by roughly putting the AAO templates onto conductive substrates due to the limited the adhesion between the AAO templates and the substrates. Vigorous electrochemical reactions may delaminate the template from conducting substrates. In Ji-Min Song and Jang-Sik Lee’s paper, there is little information about how to enhance the adhesion between the AAO templates and the substrates.
Reference:
Sci. Rep.2016,6,18967.
Langmuir 2017, 33, 503−509.
Just a reminder: To the best of our knowledge, there are only two report on fabricating nanoparticles or nanorods using electrochemical deposition via transferred ultrathin AAO template, so this technique may be immature.